p-MoS(2)/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices.

A library of two-dimensional (2D) semiconductors with different band gaps offers the construction of van der Waals (vdWs) heterostructures with different band alignments, providing a new platform for developing high-performance optoelectronic devices. Here, we demonstrate all-2D optoelectronic devices based on type-II p-MoS2/n-InSe vdWs heterojunctions operating at the near infrared (NIR) wavelength range. The p-n heterojunction diode exhibits a rectification ratio of ∼102 at V ds = ±2 V and a turn-on voltage of ∼0.8 V. Under a forward bias exceeding the turn-on voltage and a proper positive back-gate voltage, the all-2D vdWs heterojunction diode exhibits an electroluminescence with an emission peak centered at ∼1020 nm. Besides, this p-MoS2/n-InSe heterojunction shows a photoresponse at zero external bias, indicating that it can serve as a photodiode working without an external power supply. The as-demonstrated all-2D vdWs heterojunction which can work as both a light-emitting diode and a self-powered photodetector may find applications in flexible wear, display, and optical communication fields, etc.

Li P ，Yuan K ，Lin DY ，Wang T ，Du W ，Wei Z ，Watanabe K ，Taniguchi T ，Ye Y ，Dai L ... -  《RSC Advances》

Multilayer InSe-Te van der Waals Heterostructures with an Ultrahigh Rectification Ratio and Ultrasensitive Photoresponse.

Qin F ，Gao F ，Dai M ，Hu Y ，Yu M ，Wang L ，Feng W ，Li B ，Hu P ... -  《-》

Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe(2)/n-MoS(2) van der Waals heterojunctions.

Wang B ，Yang S ，Wang C ，Wu M ，Huang L ，Liu Q ，Jiang C ... -  《-》

Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS(2) van der Waals Heterojunctions.

Yang S ，Wu M ，Wang B ，Zhao LD ，Huang L ，Jiang C ，Wei SH ... -  《-》

High-Performance Devices Based on InSe-In(1-x)Ga(x)Se Van der Waals Heterojunctions.

Yu M ，Hu Y ，Gao F ，Dai M ，Wang L ，Hu P ，Feng W ... -  《-》