Synthesis of vertically-aligned large-area MoS(2)nanofilm and its application in MoS(2)/Si heterostructure photodetector.

Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20 nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA W-1), good photodetectivity (5.36 × 1011Jones) and high on/off ratioIon/Ioff(8.31 × 103at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectively. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.

Lei Y ，Yang X ，Feng W 《-》

Wafer-Scale Patterning Synthesis of Two-Dimensional WSe(2) Layers by Direct Selenization for Highly Sensitive van der Waals Heterojunction Broadband Photodetectors.

Hei J ，Li X ，Wu S ，Lin P ，Shi Z ，Tian Y ，Li X ，Zeng L ，Yu X ，Wu D ... -  《-》

High-performance MoS(2)/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared.

Lou Z ，Zeng L ，Wang Y ，Wu D ，Xu T ，Shi Z ，Tian Y ，Li X ，Tsang YH ... -  《-》

High-Speed Scalable Silicon-MoS(2) P-N Heterojunction Photodetectors.

Dhyani V ，Das S 《Scientific Reports》

Photoelectric Characteristics of a Large-Area n-MoS(2)/p-Si Heterojunction Structure Formed through Sulfurization Process.

Kim Y ，Kim T ，Kim EK 《SENSORS》