The Photodetectors Based on Lateral Monolayer MoS(2)/WS(2) Heterojunctions.

Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

Li C ，Zhu J ，Du W ，Huang Y ，Xu H ，Zhai Z ，Zou G ... -  《-》

Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors.

Xue Y ，Zhang Y ，Liu Y ，Liu H ，Song J ，Sophia J ，Liu J ，Xu Z ，Xu Q ，Wang Z ，Zheng J ，Liu Y ，Li S ，Bao Q ... -  《-》

Controllable Epitaxial Growth of Large-Area MoS(2) /WS(2) Vertical Heterostructures by Confined-Space Chemical Vapor Deposition.

The controllable large-area growth of single-crystal vertical heterostructures based on 2D transition metal dichalcogenides (TMDs) remains a challenge. Here, large-area vertical MoS2 /WS2 heterostructures are synthesized using single-step confined-space chemical vapor epitaxy. The heterostructures can evolve into two different kinds by switching the H2 flow on and off: MoS2 /WS2 heterostructures with multiple WS2 domains can be achieved without introducing the H2 flow due to the numerous nucleation centers on the bottom MoS2 monolayer during the transition stage between the MoS2 and WS2 monolayer growth. In contrast, isolated MoS2 /WS2 heterostructures with single WS2 domain can be obtained with introducing the H2 flow due to the reduced nucleation centers on the bottom MoS2 monolayer arising from the hydrogen etching effect. Both the two kinds of the vertical MoS2 /WS2 heterostructures feature high quality. The photodetectors based on the isolated MoS2 /WS2 heterostructures exhibit a high responsivity of 68 mA W-1 and a short response time of 35 ms. This single-step chemical vapor epitaxy can be used to synthesize vertical MoS2 /WS2 heterostructures with high production efficiency. The new epitaxial growth approach may open new pathways to fabricate large-area heterostructures made of different 2D TMDs monolayers of interest to electronics, optoelectronics, and other applications.

Zhang X ，Huangfu L ，Gu Z ，Xiao S ，Zhou J ，Nan H ，Gu X ，Ostrikov KK ... -  《-》

In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS(2)-MoSe(2) Lateral Heterostructures and Photodetector Application.

Chen X ，Qiu Y ，Yang H ，Liu G ，Zheng W ，Feng W ，Cao W ，Hu W ，Hu P ... -  《-》

Photogating WS(2) Photodetectors Using Embedded WSe(2) Charge Puddles.

Tsai TH ，Liang ZY ，Lin YC ，Wang CC ，Lin KI ，Suenaga K ，Chiu PW ... -  《-》