High responsivity and gate tunable graphene-MoS2 hybrid phototransistor.

A 2D atomic-layer-thickness phototransistor based on a graphene-MoS2 bybrid device is constructed with a photoresponse much larger than that of individual graphene or MoS2 based phototransistors. Strong and selective light absorption in the MoS2 layer creates electric charges that are transferred to graphene layers derived by a build-in electrical field, where they recirculate many times due to the high carrier mobility of graphene. Gate tunable Fermi level in graphene layer allows the responsivity of this hybrid phototransistor to be continuously tuned from 0 to about 10(4) mA/W by the gate voltage. Furthermore, large scale, flexible, and transparent 2D phototransistors with high responsivity are constructed from the CVD-grown graphene and MoS2 flakes. The high responsivity, gate-tunable sensitivity, wavelength selectivity, and compatibility with current circuit technologies of this type device give it great potential for future application in integrated nano-optoelectronic systems.

Xu H ，Wu J ，Feng Q ，Mao N ，Wang C ，Zhang J ... -  《-》

Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS(2) Heterojunction for Ultrahigh Performance Short Channel Phototransistor.

Lee I ，Kang WT ，Kim JE ，Kim YR ，Won UY ，Lee YH ，Yu WJ ... -  《-》

Hybrid graphene/cadmium-free ZnSe/ZnS quantum dots phototransistors for UV detection.

Sun YL ，Xie D ，Sun MX ，Teng CJ ，Qian L ，Chen RS ，Xiang L ，Ren TL ... -  《-》

Large-Scale Synthesis of a Uniform Film of Bilayer MoS2 on Graphene for 2D Heterostructure Phototransistors.

Chen C ，Feng Z ，Feng Y ，Yue Y ，Qin C ，Zhang D ，Feng W ... -  《-》

Hybrid graphene-quantum dot phototransistors with ultrahigh gain.

Konstantatos G ，Badioli M ，Gaudreau L ，Osmond J ，Bernechea M ，Garcia de Arquer FP ，Gatti F ，Koppens FH ... -  《-》